HIGH-EFFICIENCY WAVE-GUIDE INGAAS PIN PHOTODIODE WITH BANDWIDTH OF OVER 40 GHZ

被引：18

作者：

KATO, K

HATA, S

KOZEN, A

YOSHIDA, J

KAWANO, K

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa Prefecture, 243-01

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A waveguide pin photodiode structure was designed in consideration of both wide bandwidth and highly efficient coupling to the fiber. The device performed with a bandwidth higher than 40 GHz, and had high responsivity of 0.55 A/W (external quantum efficiency of 44%), showing superiority of bandwidth-efficiency product over the surface-illuminated photodiodes in the ultrahigh-frequency region.

引用

页码：473 / 474

页数：2

共 6 条

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