MONOLITHICALLY INTEGRATED LONG WAVELENGTH OPTICAL RECEIVER OEICS USING INALAS/INGAAS HETEROJUNCTION MESFETS (HFETS)

被引：7

作者：

LEE, WS

ROSSER, SA

机构：

[1] BNR Europe Ltd., Harlow, Essex CM 17 9NA, London Road

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 04期

关键词：

OPTICAL RECEIVERS; OPTOELECTRONICS;

D O I：

10.1049/el:19920229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic optical receiver OEICs have been successfully fabricated on 2" diameter InP substrates by integrating an InGaAs pin photodetector with a simple InAlAs/InGaAs heterojunction MESFET (HFET) structure. Transimpedance receivers based on 1.5-mu-m gate length FETs exhibited 3.5GHz bandwidth and 19.9pA/square-root (Hz) averaged noise current. Circuit functional yield as high as 67% has been achieved.

引用

页码：365 / 367

页数：3

共 6 条

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