SCHOTTKY-BARRIER HEIGHTS OF N-TYPE AND P-TYPE AL0.48IN0.52AS

被引：52

作者：

SADWICK, LP ^{[1
]}

KIM, CW ^{[1
]}

TAN, KL ^{[1
]}

STREIT, DC ^{[1
]}

机构：

[1] TRW CO INC, REDONDO BEACH, CA 92072 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al0.48In0.52As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and the tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type.AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of the n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al0.48In0.52As bandgap value of 1.45 eV.

引用

页码：626 / 628

页数：3

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