PROPERTIES OF STRAINED LAYER INXAL1-XAS/INP HETEROSTRUCTURES

被引：12

作者：

CHU, P

WIEDER, HH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1369 / 1372

页数：4

共 17 条

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