SCHOTTKY-BARRIER HEIGHT OF INXAL1-XAS EPITAXIAL AND STRAINED LAYERS

被引：34

作者：

CHU, P

LIN, CL

WIEDER, HH

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2423 / 2425

页数：3

共 23 条

[1] HIGH-QUALITY INALAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

AINA, L ;

MATTINGLY, M .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1637-1639

[2] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].

BEST, JS .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527

[3] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J].

CHIKA, S ;

KATO, H ;

NAKAYAMA, M ;

SANO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1441-1442

[4] PROPERTIES OF STRAINED LAYER INXAL1-XAS/INP HETEROSTRUCTURES [J].

CHU, P ;

WIEDER, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1369-1372

[5] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[6] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

KERR, T ;

TUPPEN, CG ;

WAKEFIELD, B ;

ANDREWS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :219-223

[7] IMPROVEMENTS IN THE STRUCTURAL QUALITY OF AL0.48IN0.52AS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY [J].

DAVIES, JI ;

HODSON, PD ;

MARSHALL, AC ;

SCOTT, MD ;

GRIFFITHS, RJM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (03) :223-226

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[9] MATERIAL PROPERTIES AND CLUSTERING IN MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS AND IN1-X-YGAXALYAS [J].

HONG, WP ;

CHIN, A ;

DEBBAR, N ;

HINCKLEY, J ;

BHATTACHARYA, PK ;

SINGH, J ;

CLARKE, RC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :800-801

[10] DEEP LEVELS AND A POSSIBLE D-X-LIKE CENTER IN MOLECULAR-BEAM EPITAXIAL INXAL1-XAS [J].

HONG, WP ;

DHAR, S ;

BHATTACHARYA, PK ;

CHIN, A .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :271-274

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