ADSORPTION DEPENDENCE OF VACANT-ELECTRONIC-STATE DENSITIES - AS ADATOM ON A LANTHANUM OXIDE SURFACE

被引：2

作者：

AVRAMOV, PV ^{[1
]}

RUZANKIN, SP ^{[1
]}

ZHIDOMIROV, GM ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST CATALYSIS,NOVOSIBIRSK 630090,USSR

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.46.6553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of the lanthanum oxide surface with an adsorbed As atom has been studied by the X-alpha method. Analysis of the occupied electronic density of states and contour maps of the valence-electronic charge density for the bulk and adsorbed surface clusters shows pronounced differences connected with Asp- and La s + La d-state hybridization. The influence of these factors on absorption-spectra features is discussed. The surface reduction effects are considered.

引用

页码：6553 / 6559

页数：7