FIRST-PHASE NUCLEATION OF METAL-RICH SILICIDE IN TA/SI SYSTEMS

被引：17

作者：

NOYA, A

TAKEYAMA, M

SASAKI, K

NAKANISHI, T

机构：

[1] Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid-phase reactions in the interfacial region of Ta/(100)Si systems have been studied by x-ray diffraction and Auger electron spectroscopy. The metal-rich silicide of Ta5Si3, which has never been observed in Ta/Si systems so far, is first nucleated at annealing temperatures of 600-650 degrees C in the first stage of the reaction. Subsequent annealing at 700 degrees C leads to the formation of a TaSi2 phase, and the metal-rich phase is replaced by TaSi2 at annealing temperatures over 700 degrees C by the out-diffusion of Si.

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页码：3893 / 3895

页数：3

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