MODIFICATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON WITH FLUORINE AND OXYGEN

被引：15

作者：

GINLEY, DS

机构：

来源：

关键词：

D O I：

10.1063/1.92826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：624 / 626

页数：3

共 13 条

[1]

CAMPBELL DR, 1979, B AM PHYS SOC, V24, P435

[2]

CLARKE DR, 1978, J APPL PHYS, V49, P2407, DOI 10.1063/1.325135

[3]

GINLEY DS, 1980, SOLAR MATERIALS SCI, P619

[4]

HARNDEN JD, 1972, ELECTRONICS-US, V45, P91

[5]

Landau R., 1952, CORROSION, V8, P283

[6] THEORY OF CONDUCTION IN ZNO VARISTORS [J].

MAHAN, GD ;

LEVINSON, LM ;

PHILIPP, HR .

[7]

PIKE GE, 1981, ADV CERAM, V1, P53

SEAGER, CH ;

CASTNER, TG .

[9] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

SEAGER, CH ;

GINLEY, DS .

[10] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].

SEAGER, CH ;

GINLEY, DS .