DEFINING MICRON-SCALE PLATINUM CONTACTS ON HYDROGENATED AMORPHOUS-SILICON

被引：5

作者：

LECOURS, A

MEUNIER, M

BISSON, M

机构：

[1] ECOLE POLYTECH,COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA

[2] ECOLE POLYTECH,DEPT ENGN PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 110

页数：2

共 8 条

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[4] GHANDHI SK, 1983, VLSI FABRICATION PRI, P526
[5] SIMULATION OF THE AMORPHOUS-SILICON STATIC INDUCTION TRANSISTOR
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MEUNIER, M
TANNOUS, CG
[J]. SOLID-STATE ELECTRONICS, 1989, 32 (02) : 149 - 157
[6] CF4-AR REACTIVE ION ETCHING OF GALLIUM-ARSENIDE
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BELANGER, M
MEUNIER, M
CURRIE, JF
[J]. CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 259 - 261
[7] ADSORBATE EFFECTS ON THE ELECTRICAL CONDUCTANCE OF A-SI-H
TANIELIAN, M
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 435 - 462
[8] VEDA M, 1985, JPN J APPL PHYS, V24, P467