CF4-AR REACTIVE ION ETCHING OF GALLIUM-ARSENIDE

被引：1

作者：

LUSSIER, P

BELANGER, M

MEUNIER, M

CURRIE, JF

机构：

[1] ECOLE POLYTECH,COUCHES MINCES GRP,CP 6079,SUCCURSALE A,MONTREAL H3C 3A7,QUEBEC,CANADA

[2] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-045

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：259 / 261

页数：3

相关论文

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