CONDUCTION-BAND MINIMUM OF (GAAS)1/(ALAS)1 SUPERLATTICES - RELATIONSHIP TO X MINIMUM OF ALAS

被引：8

作者：

GE, WK ^{[1
]}

SCHMIDT, WD ^{[1
]}

STURGE, MD ^{[1
]}

PFEIFFER, LN ^{[1
]}

WEST, KW ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.44.3432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the conduction-band minimum in a (GaAs)1/(AlAs)1 superlattice derives from the X(x,y) minimum of bulk AlAs, not from L of GaAs as predicted by many theoretical calculations. This is shown by the sign of the shift in the low-temperature photoluminescence under [001] stress, by the relative magnitudes of the shifts under [100] and [110] stress, by the phonon sidebands, and by the observation of a splitting under [100] but not under [110] stress.

引用

页码：3432 / 3435

页数：4

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