SYMMETRY OF THE LOWEST CONDUCTION-BAND STATES IN VERY SHORT-PERIOD GAAS-ALAS SUPERLATTICES

被引：5

作者：

GE, W ^{[1
]}

SCHMIDT, WD ^{[1
]}

STURGE, MD ^{[1
]}

PFEIFFER, LN ^{[1
]}

WEST, KW ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF LUMINESCENCE | 1991年 / 48-9卷

关键词：

ALLOY;

D O I：

10.1016/0022-2313(91)90235-N

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The symmetry of the lowest conduction band minimum (CBM) in type-II (GaAs)n-(AlAs)n short-period superlattices (SL) was investigated by photoluminescence (PL) decay, PL excitation (PLE) and PL under uniaxial compressive stress. The results show that for n greater-than-or-equal-to 4, the CBM is in the center of the SL Brillouin zone (BZ) and the wave function is mainly derived from the bulk X(z) state. For n less-than-or-equal-to 3, the CBM is away from the center of the SL BZ, and derives mainly from the bulk X(x,y) states. Interface disorder plays an essential role in both the transition probabilities and the energy levels.

引用

页码：759 / 762

页数：4

共 14 条

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