LOCALIZED INDIRECT EXCITONS IN A SHORT-PERIOD GAAS/ALAS SUPERLATTICE

被引:103
作者
MINAMI, F
HIRATA, K
ERA, K
YAO, T
MASUMOTO, Y
机构
[1] NATL INST RES INORGAN MAT,SAKURA,IBARAKI 305,JAPAN
[2] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
[3] UNIV TSUKUBA,INST PHYS,SAKURA,IBARAKI 305,JAPAN
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 05期
关键词
D O I
10.1103/PhysRevB.36.2875
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2875 / 2878
页数:4
相关论文
共 21 条
[1]   SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J].
ANDREONI, W ;
CAR, R .
PHYSICAL REVIEW B, 1980, 21 (08) :3334-3344
[2]   ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J].
BALDERESCHI, A ;
HESS, E ;
MASCHKE, K ;
NEUMANN, H ;
SCHULZE, KR ;
UNGER, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4709-4717
[3]  
CARUTHERS E, 1978, PHYS REV B, V17, P765
[4]   THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J].
COLLINS, RW ;
PAESLER, MA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1980, 34 (10) :833-836
[5]  
DINGLE R, 1977, GAAS RELATED COMPOUN, P210
[6]   X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].
FINKMAN, E ;
STURGE, MD ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301
[7]   OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIBASHI, A ;
MORI, Y ;
ITABASHI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695
[8]   EXPONENTIAL-DISTRIBUTION OF THE RADIATIVE DECAY-RATES INDUCED BY ALLOY SCATTERING IN AN INDIRECT-GAP SEMICONDUCTOR [J].
KLEIN, MV ;
STURGE, MD ;
COHEN, E .
PHYSICAL REVIEW B, 1982, 25 (06) :4331-4333
[9]   ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS [J].
MILLER, RC ;
KLEINMAN, DA ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1984, 29 (12) :7085-7087
[10]  
MINAMI F, UNPUB