ENERGY-LEVELS OF VERY SHORT-PERIOD (GAAS)N-(ALAS)N SUPERLATTICES

被引：36

作者：

GE, WK ^{[1
]}

STURGE, MD ^{[1
]}

SCHMIDT, WD ^{[1
]}

PFEIFFER, LN ^{[1
]}

WEST, KW ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.103576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy levels of very short-period (GaAs)n-(AlAs) n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga 0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.

引用

页码：55 / 57

页数：3

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