EPR MEASUREMENTS ON CHROMIUM DOPED GAAS, GAP AND INP

被引：20

作者：

GOSWAMI, NK

NEWMAN, RC

WHITEHOUSE, JE

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(80)90136-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：897 / 900

页数：4

共 14 条

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[5] HENNEL AM, 1980, 3 5 P SEM INS MAT C
[6] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR
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[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (02) : 143 - 146
[7] KAUFMANN U, 1980, APPL PHYS LETT, V36, P749
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[J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22
[9] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION
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STAUSS, GH
[J]. PHYSICAL REVIEW B, 1977, 16 (03): : 971 - 973
[10] LIGHTOWLERS EC, 1978, J PHYS C, V11, P1405