A MODEL OF SIPOS DEPOSITION BASED ON INFRARED SPECTROSCOPIC ANALYSIS

被引:30
作者
KNOLLE, WR
MAXWELL, HR
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D O I
10.1149/1.2129387
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2254 / 2259
页数:6
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共 14 条
[1]  
BRUEGEL W, 1962, INTRO INFRARED SPECT, P301
[2]   PHASE SEPARATION BY SPINODAL DECOMPOSITION IN ISOTROPIC SYSTEMS [J].
CAHN, JW .
JOURNAL OF CHEMICAL PHYSICS, 1965, 42 (01) :93-+
[3]   CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].
HAMASAKI, M ;
ADACHI, T ;
WAKAYAMA, S ;
KIKUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992
[4]   SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES [J].
JORGENSO.GV ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2672-&
[5]  
MATSUSHITA T, 1976, SUPPL JPN J APPL PHY, V15, P41
[6]  
MAXWELL HR, 1980, OCT EL SOC M HOLL
[7]  
MAXWELL HR, 1978, J ELCHEM SO, V125, pC257
[8]  
MAXWELL HR, 1979, MAY EL SOC M BOST
[9]  
MAXWELL HR, 1978, SEMICONDUCTOR CHARAC, P180
[10]   EFFECTS OF OXYGEN DOPING AND SUBSEQUENT ANNEALING IN NITROGEN ON THE STRUCTURE OF POLYCRYSTALLINE SILICON [J].
MCGINN, JT ;
GOODMAN, AM .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :601-604