ACTIVATION-ANALYSIS OF IMPURITY DISTRIBUTIONS IN CRITICAL LAYERS OF SEMICONDUCTORS

被引：9

作者：

RAUSCH, H

BEREZNAI, T

BOGANCS, J

机构：

[1] RES INST TELECOMMUN, BUDAPEST, HUNGARY

[2] TUNGSRAM RES LABS, BUDAPEST, HUNGARY

[3] CENT RES INST PHYS, BUDAPEST, HUNGARY

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1974年 / 19卷 / 01期

关键词：

D O I：

10.1007/BF02515269

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：77 / 85

页数：9

共 8 条

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[7] A CAUSE AND CURE OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS [J].

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JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5020-+

[8] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J].

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BAGLIN, JEE .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2031-&

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