EFFECT OF GROWTH RATE ON STACKING-FAULT DENSITY IN EPITAXIAL SILICON LAYERS

被引：6

作者：

NOTIS, MR

CONARD, GP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 3P1期

关键词：

D O I：

10.1063/1.1713438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：695 / &

共 17 条

[1] DEFECTS IN VAPOUR-GROWN SILICON LAYERS [J].

BATSFORD, KO ;

THOMAS, DJD .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :353-354

[2]

BEATTY HJ, AD259477, P4

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&

[4]

BOOKER GR, 1962, J APPL PHYS, V33, P1536

[5] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J].

CHARIG, JM ;

JOYCE, BA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :957-962

[6] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[7] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&

[8] STACKING FAULTS IN EPITAXIAL MATERIAL [J].

JACCODINE, RJ .

APPLIED PHYSICS LETTERS, 1963, 2 (11) :201-202

[9]

JACCODINE RJ, PRIVATE COMMUNICATIO

[10]

LIGHT TB, 1962, 1961 AIME MET C LOS, V15, P137

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