MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF STRAINED GALNAS/ALLNAS AND INAS/GAAS QUANTUM-WELL TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引:13
作者
GRIEM, HT [1 ]
HSIEH, KH [1 ]
DHAENENS, IJ [1 ]
DELANEY, MJ [1 ]
HENIGE, JA [1 ]
WICKS, GW [1 ]
BROWN, AS [1 ]
机构
[1] HUGHES RES LABS,MALIBU,CA 90265
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期
关键词
D O I
10.1116/1.583751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:785 / 791
页数:7
相关论文
共 17 条
  • [1] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION
    CHENG, KY
    CHO, AY
    CHRISTMAN, SB
    PEARSALL, TP
    ROWE, JE
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 423 - 425
  • [2] Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1
  • [3] EASTMAN LF, 1983, COMMUNICATION
  • [4] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    FRITZ, IJ
    PICRAUX, ST
    DAWSON, LR
    DRUMMOND, TJ
    LAIDIG, WD
    ANDERSON, NG
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
  • [5] GRIEM T, 1984, 3RD INT C MBE SAN FR
  • [6] HIROSE K, 1985, I PHYS C SER, V79, P529
  • [7] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
    LEWIS, BF
    LEE, TC
    GRUNTHANER, FJ
    MADHUKAR, A
    FERNANDEZ, R
    MASERJIAN, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
  • [8] Lorenz M. R., 1970, Proceedings of the 10th international conference on the physics of semiconductors, P444
  • [9] MAKI P, 1985, THESIS CORNELL U
  • [10] MASSELINK WT, 1985, TECH DIG, P755