MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF STRAINED GALNAS/ALLNAS AND INAS/GAAS QUANTUM-WELL TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引：13

作者：

GRIEM, HT ^{[1
]}

HSIEH, KH ^{[1
]}

DHAENENS, IJ ^{[1
]}

DELANEY, MJ ^{[1
]}

HENIGE, JA ^{[1
]}

WICKS, GW ^{[1
]}

BROWN, AS ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：785 / 791

页数：7

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