STRUCTURAL AND ELECTRICAL PROPERTIES OF VANADIUM DIOXIDE THIN FILMS

被引：62

作者：

ROZGONYI, GA

HENSLER, DH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1968年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.1492608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：194 / +

页数：1

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共 17 条

[1] THEORY OF SEMICONDUCTOR-TO-METAL TRANSITIONS
ADLER, D
BROOKS, H
[J]. PHYSICAL REVIEW, 1967, 155 (03): : 826 - +
[2] INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE
BARKER, AS
VERLEUR, HW
GUGGENHEIM, HJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (26) : 1286 - +
[3] ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS
Bongers, P. F.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 275 - 277
[4] REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS
FULS, EN
HENSLER, DH
ROSS, AR
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 199 - &
[5] GUGGENHEIM HJ, TO BE PUBLISHED
[6] HANNAY NB, 1959, SEMICONDUCTORS ED, pCH14
[7] TRANSPORT PROPERTIES OF SPUTTERED VANADIUM DIOXIDE THIN FILMS
HENSLER, DH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2354 - +
[8] HALL EFFECT OF VANADIUM DIOXIDE POWDER
KITAHIRO, I
OHASHI, T
WATANABE, A
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) : 2422 - &
[9] EPITAXIAL GROWTH OF VO2 SINGLE CRYSTALS AND THEIR ANISOTROPIC PROPERTIES IN ELECTRICAL RESISTIVITIES
KOIDE, S
TAKEI, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 946 - &
[10] PREPARATION AND PROPERTIES OF VANADIUM DIOXIDE FILMS
MACCHESNEY, JB
POTTER, JF
GUGGENHEIM, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 52 - +