DEPTH AND VELOCITY OF THE LASER-MELTED FRONT FROM AN ANALYTICAL SOLUTION OF THE HEAT-CONDUCTION EQUATION

被引:16
作者
BERTOLOTTI, M [1 ]
SIBILIA, C [1 ]
机构
[1] CNR,NATL QUANTUM ELECTR & PLASMA GRP,ROME,ITALY
关键词
D O I
10.1109/JQE.1981.1070643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1980 / 1989
页数:10
相关论文
共 16 条
  • [1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
    BAERI, P
    CAMPISANO, SU
    FOTI, G
    RIMINI, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
  • [2] BASS M, 1980, LASER HEATING SOLIDS
  • [3] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE
    BELL, RO
    TOULEMONDE, M
    SIFFERT, P
    [J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319
  • [4] BOLEY BA, 1963, 3RD P S NAV STRUCT M
  • [5] Carslaw H.S., 1962, CONDUCTION HEAT SOLI
  • [6] MELTING OF A HALF-SPACE SUBJECTED TO A CONSTANT HEAT INPUT
    COHEN, MI
    [J]. JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS, 1967, 283 (04): : 271 - +
  • [7] HIGH-INTENSITY LASER-INDUCED VAPORIZATION AND EXPLOSION OF SOLID MATERIAL
    DABBY, FW
    PAEK, U
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (02) : 106 - &
  • [8] DESCHAMPS G, 1970, MATH APPLIED PHYSICS
  • [9] LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES
    GHEZ, RA
    LAFF, RA
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2103 - 2110
  • [10] Goodman T.R., 1964, ADV HEAT TRANSFER, V1, P51, DOI DOI 10.1016/S0065-2717(08)70097-2