CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE

By solving the time-dependent heat flow equation, the temperature reached by silicon and cadmium telluride surface layers under high power density ruby laser pulsed illumination, is calculated. The results are presented in directly useful figures allowing the determination of the surface temperature, its evolution towards the bulk as a function of time... In particular, it should be noticed that for a 25 ns half-power width, pulses of 0.8J/cm2 are sufficient to melt the top of an amorphous silicon layer, this value becomes noticeably lower for cadmium telluride. © 1979 Springer-Verlag.