TUNNELING OF ELECTRONS IN QUANTUM-WELLS WITH INDIRECT GAP SEMICONDUCTOR BARRIERS

被引：7

作者：

BREY, L

TEJEDOR, C

机构：

[1] Univ Autonoma, Madrid, Spain, Univ Autonoma, Madrid, Spain

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 09期

关键词：

Acknowledgements - We are indebted to Prof. F. Flores and Dr. J. Sanchcz-Dehesa for very useful discussions and the critical reading of the manuscript. This work has been supported in part by the Comission Asesora de Investigation Cientifica y Tecnica of Spain;

D O I：

10.1016/0038-1098(87)90173-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

16

引用

收藏

页码：573 / 576

页数：4

相关论文

共 19 条

[1]

ALTARELLI M, 1986, 1985 LECT NOT HOUCH

[2] CARRIER LIFETIMES AND LOCALIZATION IN COUPLED GAAS-GAALAS QUANTUM-WELLS IN HIGH ELECTRIC-FIELDS [J].

AUSTIN, EJ ;

JAROS, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (04) :533-541

[3] UNIFORMITY IN THE ELECTRICAL CHARACTERISTICS OF GAAS/ALAS TUNNEL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

MCGILL, TC ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :307-309

[4]

BREY L, 1986, 18TH P INT C PHYS SE

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[6]

Cohen-Tannoudji C., 1977, MECANIQUE QUANTIQUE

[7] PHOTOEMISSION FROM A SUPERLATTICE AND A SINGLE QUANTUM WELL [J].

HOUDRE, R ;

HERMANN, C ;

LAMPEL, G ;

FRIJLINK, PM ;

GOSSARD, AC .

PHYSICAL REVIEW LETTERS, 1985, 55 (07) :734-737

[8] INFLUENCE OF INDIRECT MINIMA ON ELECTRON-CONCENTRATION IN GAAS-ALXGA1-XAS SUPERLATTICES - A NUMERICAL STUDY [J].

IKONIC, Z ;

MILANOVIC, V ;

TJAPKIN, D .

PHYSICAL REVIEW B, 1985, 32 (12) :8197-8202

[9]

Kane E. O., 1969, Tunneling phenomena in solids, P1

[10] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492