LIGHT-INDUCED CHANGES IN THE DENSITY OF STATES OF A-SI-H

被引：4

作者：

OZDEMIR, S ^{[1
]}

OKTU, O ^{[1
]}

机构：

[1] MIDDLE E TECH UNIV,DEPT PHYS,ANKARA,TURKEY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 107卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(89)90474-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：289 / 294

页数：6

共 32 条

[1] EXPONENTIAL ABSORPTION-EDGE IN HYDROGENATED A-SI FILMS [J].

ABELES, B ;

WRONSKI, CR ;

TIEDJE, T ;

CODY, GD .

SOLID STATE COMMUNICATIONS, 1980, 36 (06) :537-540

[2] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].

ADLER, D .

SOLAR CELLS, 1983, 9 (1-2) :133-148

[3] PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT [J].

COHEN, JD ;

LANG, DV ;

HARBISON, JP ;

SERGENT, AM .

SOLAR CELLS, 1983, 9 (1-2) :119-131

[4] DETERMINATION OF LOCALIZED STATE ENERGY-DISTRIBUTION IN A-SI-H BY MODULATED PHOTOCURRENT [J].

FORTUNATO, G .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :739-742

[5]

FORTUNATO G, 1987, J NONCRYST SOLIDS, V98

[6] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[7] THERMOSTIMULATED CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS [J].

FRITZSCHE, H ;

IBARAKI, N .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :299-311

[8] THERMALLY STIMULATED CURRENTS IN AMORPHOUS-SILICON [J].

FUHS, W ;

MILLEVILLE, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (01) :K29-K32

[9] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

GUHA, S ;

HUANG, CY ;

HUDGENS, SJ .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :50-51

[10]

KAZANSKI AG, 1987, J NONCRYST SOLIDS, V98

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