ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS

被引：17

作者：

GUHA, S

HUANG, CY

HUDGENS, SJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.95001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：50 / 51

页数：2

共 15 条

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[4]

FRITZSCHE H, COMMUNICATION

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GUHA, S ;

HUANG, CY ;

HUDGENS, SJ .

PHYSICAL REVIEW B, 1984, 29 (10) :5995-5998

[6] ON THE MECHANISM OF LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

GUHA, S ;

YANG, J ;

CZUBATYJ, W ;

HUDGENS, SJ ;

HACK, M .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :588-589

[7] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].

HAN, D ;

FRITZSCHE, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400

[8] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J].

JOUSSE, D ;

BASSET, R ;

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BOURDON, B .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :208-211

[9] SHAPE OF DISORDER [J].

OVSHINSKY, SR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :17-28

[10] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

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