ELECTROREFLECTANCE AND PHOTOREFLECTANCE OF ULTRATHIN GE/SI SUPERLATTICES GROWN BY PHASE-LOCKED EPITAXY

被引：17

作者：

ASAMI, K ^{[1
]}

MIKI, K ^{[1
]}

SAKAMOTO, K ^{[1
]}

SAKAMOTO, T ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

Electroreflectance; Ge/Si; Phase-locked epitaxy; Photoreflectance; Structurally induced transition; Ultrathin superlattice;

D O I：

10.1143/JJAP.29.L381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical studies of ultrathin Ge/Si superlattices grown on (001) Si substrates by phase-locked epitaxy have been carried out. The structures consist of alternating layers of pure Ge and Si with periods of 8, 10 and 12 monolayers. Using photo- and electroreflectance (PR and ER), four structurally induced optical transitions have been observed in the energy ragion 0.76–2.5 eV in both systems with periods of 8 and 10 monolayers. The transition energies show a blue shift with decreasing strain. At a growth temperature of 400°C, the PR and ER spectra of Ge6/Si6, which has a period of 12 monolayers, show not alloylike behavior but superlattice features similar to the samples with periods of 8 and 10 monolayers. © 1990 The Japan Society of Applied Physics.

引用

页码：L381 / L384

页数：4

共 24 条

[1] ELECTROREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF (ALXGA1-X)1-ZINZPYAS1-Y LATTICE MATCHED TO GAAS [J].