GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS CREATED BY BI-EPITAXIAL PROCESSES

被引：3

作者：

CHAR, K

COLCLOUGH, MS

LEE, LP

ZAHARCHUK, G

机构：

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91404-R

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a "bi-epitaxial" process to create 45 degree grain boundary Josephson junctions in YBa2Cu3O7. These bi-epitaxial grain boundary Josephson junctions are defined by standard photolithographic technique, and appear to be readily extended to integrated circuits. Some transport properties are reported and compared to other types of grain boundary Josephson junctions.

引用

页码：2561 / 2562

页数：2

共 6 条

[1]

CHAR K, UNPUB

[2]

CHAR K, IN PRESS APPL PHYS L

[3]

COLCLOUGH MS, 1991, 3RD P INT SUP EL C S

[4]

DIMOS D, 1988, PHYS REV LETT, V61, P1653

[5] SCALING BEHAVIOR IN ELECTRICAL TRANSPORT ACROSS GRAIN-BOUNDARIES IN YBA2CU3O7-DELTA SUPERCONDUCTORS [J].

GROSS, R ;

CHAUDHARI, P ;

KAWASAKI, M ;

GUPTA, A .

PHYSICAL REVIEW B, 1990, 42 (16) :10735-10737

[6] SCALING BEHAVIOR OF YBA2CU3O7-DELTA THIN-FILM WEAK LINKS [J].

RUSSEK, SE ;

LATHROP, DK ;

MOECKLY, BH ;

BUHRMAN, RA ;

SHIN, DH ;

SILCOX, J .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1155-1157

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