ALGAINP VISIBLE RESONANT-CAVITY LIGHT-EMITTING-DIODES

被引：21

作者：

LOTT, JA

SCHNEIDER, RP

ZOLPER, JC

MALLOY, KJ

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

[2] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期

关键词：

D O I：

10.1109/68.219692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible (670 nm) resonant cavity light-emitting diodes (RCLED's) composed entirely of AlGaInP alloys are reported. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBR's). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays.

引用

页码：631 / 633

页数：3

共 15 条

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