VISIBLE (660 NM) RESONANT CAVITY LIGHT-EMITTING-DIODES

被引：16

作者：

LOTT, JA

SCHNEIDER, RP

VAWTER, GA

ZOLPER, JC

MALLOY, KJ

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

[2] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

LIGHT-EMITTING DIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 nm (2.6 meV) to 45 run (12.8 mev) were obtained by varying the cavity quality factor (Q).

引用

页码：328 / 329

页数：2

共 8 条

[1] TEMPERATURE-DEPENDENCE OF THE PROPERTIES OF DBR MIRRORS USED IN SURFACE NORMAL OPTOELECTRONIC DEVICES
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