ENHANCED SPONTANEOUS EMISSION FROM GAAS QUANTUM-WELLS IN MONOLITHIC MICROCAVITIES

被引:196
作者
YOKOYAMA, H
NISHI, K
ANAN, T
YAMADA, H
BRORSON, SD
IPPEN, EP
机构
[1] NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.103771
中图分类号
O59 [应用物理学];
学科分类号
摘要
Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Perot Cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.
引用
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页码:2814 / 2816
页数:3
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