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RADIATIVE RECOMBINATION COEFFICIENT OF FREE-CARRIERS IN GAAS-AIGAAS QUANTUM-WELLS AND ITS DEPENDENCE ON TEMPERATURE
被引:91
作者
:
MATSUSUE, T
论文数:
0
引用数:
0
h-index:
0
MATSUSUE, T
SAKAKI, H
论文数:
0
引用数:
0
h-index:
0
SAKAKI, H
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1987年
/ 50卷
/ 20期
关键词
:
D O I
:
10.1063/1.97844
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1429 / 1431
页数:3
相关论文
共 11 条
[1]
RECOMBINATION LIFETIME OF CARRIERS IN GAAS-GAALAS QUANTUM WELLS NEAR ROOM-TEMPERATURE
ARAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
ARAKAWA, Y
SAKAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SAKAKI, H
NISHIOKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
NISHIOKA, M
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
YOSHINO, J
KAMIYA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
KAMIYA, T
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(05)
: 519
-
521
[2]
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, pCH4
[3]
EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
BIMBERG, D
CHRISTEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
CHRISTEN, J
WERNER, A
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
WERNER, A
KUNST, M
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
KUNST, M
WEIMANN, G
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
WEIMANN, G
SCHLAPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
SCHLAPP, W
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(02)
: 76
-
78
[4]
RECOMBINATION DYNAMICS OF CARRIERS IN GAAS-GAALAS QUANTUM-WELL STRUCTURES
CHRISTEN, J
论文数:
0
引用数:
0
h-index:
0
CHRISTEN, J
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
BIMBERG, D
[J].
SURFACE SCIENCE,
1986,
174
(1-3)
: 261
-
271
[5]
ROOM-TEMPERATURE PHOTOLUMINESCENCE TIMES IN A GAAS ALXGA1-XAS MOLECULAR-BEAM EPITAXY MULTIPLE QUANTUM WELL STRUCTURE
FOUQUET, JE
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Edward L. Ginzton, Lab, Stanford, CA, USA, Stanford Univ, Edward L. Ginzton Lab, Stanford, CA, USA
FOUQUET, JE
SIEGMAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Edward L. Ginzton, Lab, Stanford, CA, USA, Stanford Univ, Edward L. Ginzton Lab, Stanford, CA, USA
SIEGMAN, AE
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(03)
: 280
-
282
[6]
FOUQUET JE, 1985, THESIS STANFORD U
[7]
RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
论文数:
0
引用数:
0
h-index:
0
GOBEL, EO
JUNG, H
论文数:
0
引用数:
0
h-index:
0
JUNG, H
KUHL, J
论文数:
0
引用数:
0
h-index:
0
KUHL, J
PLOOG, K
论文数:
0
引用数:
0
h-index:
0
PLOOG, K
[J].
PHYSICAL REVIEW LETTERS,
1983,
51
(17)
: 1588
-
1591
[8]
EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
INOUE, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
INOUE, K
SAKAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
SAKAKI, H
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
YOSHINO, J
YOSHIOKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
YOSHIOKA, Y
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(10)
: 973
-
975
[9]
EXCITONS IN GAAS QUANTUM WELLS
MILLER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MILLER, RC
KLEINMAN, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
KLEINMAN, DA
[J].
JOURNAL OF LUMINESCENCE,
1985,
30
(1-4)
: 520
-
540
[10]
Stern F, 1964, PHYS REV A, V133, P553
←
1
2
→
共 11 条
[1]
RECOMBINATION LIFETIME OF CARRIERS IN GAAS-GAALAS QUANTUM WELLS NEAR ROOM-TEMPERATURE
ARAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
ARAKAWA, Y
SAKAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SAKAKI, H
NISHIOKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
NISHIOKA, M
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
YOSHINO, J
KAMIYA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
KAMIYA, T
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(05)
: 519
-
521
[2]
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, pCH4
[3]
EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
BIMBERG, D
CHRISTEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
CHRISTEN, J
WERNER, A
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
WERNER, A
KUNST, M
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
KUNST, M
WEIMANN, G
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
WEIMANN, G
SCHLAPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BEREICH STRAHLENCHEM,D-1000 BERLIN 39,FED REP GER
SCHLAPP, W
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(02)
: 76
-
78
[4]
RECOMBINATION DYNAMICS OF CARRIERS IN GAAS-GAALAS QUANTUM-WELL STRUCTURES
CHRISTEN, J
论文数:
0
引用数:
0
h-index:
0
CHRISTEN, J
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
BIMBERG, D
[J].
SURFACE SCIENCE,
1986,
174
(1-3)
: 261
-
271
[5]
ROOM-TEMPERATURE PHOTOLUMINESCENCE TIMES IN A GAAS ALXGA1-XAS MOLECULAR-BEAM EPITAXY MULTIPLE QUANTUM WELL STRUCTURE
FOUQUET, JE
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Edward L. Ginzton, Lab, Stanford, CA, USA, Stanford Univ, Edward L. Ginzton Lab, Stanford, CA, USA
FOUQUET, JE
SIEGMAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Edward L. Ginzton, Lab, Stanford, CA, USA, Stanford Univ, Edward L. Ginzton Lab, Stanford, CA, USA
SIEGMAN, AE
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(03)
: 280
-
282
[6]
FOUQUET JE, 1985, THESIS STANFORD U
[7]
RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
论文数:
0
引用数:
0
h-index:
0
GOBEL, EO
JUNG, H
论文数:
0
引用数:
0
h-index:
0
JUNG, H
KUHL, J
论文数:
0
引用数:
0
h-index:
0
KUHL, J
PLOOG, K
论文数:
0
引用数:
0
h-index:
0
PLOOG, K
[J].
PHYSICAL REVIEW LETTERS,
1983,
51
(17)
: 1588
-
1591
[8]
EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
INOUE, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
INOUE, K
SAKAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
SAKAKI, H
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
YOSHINO, J
YOSHIOKA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
YOSHIOKA, Y
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(10)
: 973
-
975
[9]
EXCITONS IN GAAS QUANTUM WELLS
MILLER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MILLER, RC
KLEINMAN, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
KLEINMAN, DA
[J].
JOURNAL OF LUMINESCENCE,
1985,
30
(1-4)
: 520
-
540
[10]
Stern F, 1964, PHYS REV A, V133, P553
←
1
2
→