INHIBITED SPONTANEOUS EMISSION IN SOLID-STATE PHYSICS AND ELECTRONICS

被引：12749

作者：

YABLONOVITCH, E

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.58.2059

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2059 / 2062

页数：4

共 14 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] OBSERVATION OF INHIBITED SPONTANEOUS EMISSION [J].

GABRIELSE, G ;

DEHMELT, H .

PHYSICAL REVIEW LETTERS, 1985, 55 (01) :67-70

[3] ANTISYMMETRIC TAPER OF DISTRIBUTED FEEDBACK LASERS [J].

HAUS, HA ;

SHANK, CV .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (09) :532-539

[4] INHIBITED SPONTANEOUS EMISSION BY A RYDBERG ATOM [J].

HULET, RG ;

HILFER, ES ;

KLEPPNER, D .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2137-2140

[5]

KOGELNIK H, 1972, J APPL PHYS, V43, P2328

[6] AN OPTIMIZED PI-2 DISTRIBUTED FEEDBACK LASER [J].

MCCALL, SL ;

PLATZMAN, PM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (12) :1899-1904

[7] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

NELSON, RJ ;

SOBERS, RG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6103-6108

[8]

PURCELL EM, 1946, PHYS REV, V69, P681

[9] 27.5-PERCENT SILICON CONCENTRATOR SOLAR-CELLS [J].

SINTON, RA ;

KWARK, Y ;

GAN, JY ;

SWANSON, RM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :567-569

[10] SURVEY OF DEFECT-MEDIATED RECOMBINATION LIFETIMES IN GAAS EPILAYERS GROWN BY DIFFERENT METHODS [J].

YABLONOVITCH, E ;

BHAT, R ;

HARBISON, JP ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1197-1199

← 1 2 →