ELECTRON-HOLE QUANTUM-CONFINED STATES AFFECTED BY POINT-CHARGE IN SEMICONDUCTOR CRYSTALLITE

被引：11

作者：

PING, EX

DALAL, V

机构：

[1] Microelectronic Research Center, Iowa State University, Ames

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 10期

关键词：

D O I：

10.1016/0038-1098(92)90157-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of a point charge inside a semiconductor crystallite on the electron, hole and electron-hole (e-h) pair ground quantum-confined states have been studied under the effective-mass approximation by means of the variational-perturbation approach. The electron, hole and e-h pair ground quantum-confined state energy as functions of the crystallite radius, the charge position inside the crystallite have been obtained. The validity of the variational-perturbation method is presented. Effects of this point charge on the optical properties of the crystallite have also been discussed.

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页码：749 / 753

页数：5

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