DESIGN OF A CHARGE SENSITIVE PREAMPLIFIER ON HIGH-RESISTIVITY SILICON

被引:49
作者
RADEKA, V
REHAK, P
RESCIA, S
GATTI, E
LONGONI, A
SAMPIETRO, M
HOLL, P
STRUDER, L
KEMMER, J
机构
[1] POLITECN MILAN,I-20133 MILAN,ITALY
[2] MAX PLANCK INST,D-8000 MUNCHEN,FED REP GER
[3] TECH UNIV MUNCHEN,D-8048 GRACHING,FED REP GER
[4] MESSERSCHMITT BOLKOW BLOHM GMBH,D-8000 MUNICH,FED REP GER
关键词
D O I
10.1109/23.12696
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
6
引用
收藏
页码:155 / 159
页数:5
相关论文
共 6 条