A 23-NS 4-MB CMOS SRAM WITH 0.2-MU A STANDBY CURRENT

被引：13

作者：

SASAKI, K ^{[1
]}

ISHIBASHI, K ^{[1
]}

SHIMOHIGASHI, K ^{[1
]}

YAMANAKA, T ^{[1
]}

MORIWAKI, N ^{[1
]}

HONJO, S ^{[1
]}

IKEDA, S ^{[1
]}

KOIKE, A ^{[1
]}

MEGURO, S ^{[1
]}

MINATO, O ^{[1
]}

机构：

[1] HITACHI LTD,DIV SEMICOND,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 05期

关键词：

D O I：

10.1109/4.62127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4-Mb CMOS SRAM having 0.2-μA standby current at a supply voltage of 3 V has been developed. Current-mirror/PMOS cross-coupled cascade sense-amplifier circuits have achieved the fast address access time of 23 ns. A new noise-immune data-latch circuit has attained power reduction characteristics at a low operating cycle time without access delay. A 0.5-μm CMOS, four-level poly, and two-level metal technology with a polysilicon PMOS load memory cell has realized a small cell area of 17 μm2 and the very small standby current. A quadruple-array word-decoder architecture has enabled a small chip area of 122 mm2. © 1990 IEEE

引用

页码：1075 / 1081

页数：7

共 14 条

[1]

AIZAKI S, 1990, FEB ISSCC, P126

[2]

HAYAKAWA S, 1990, FEB ISSCC, P128

[3]

HIROSE T, 1990, FEB ISSCC, P132

[4]

ISHIBASHI K, 1989, MAY S VLSI CIRC, P29

[5]

KOMATSU T, 1987, FEB ISSCC, P258

[6]

MINATO O, 1987, FEB ISSCC, P260

[7] A 25-NS 4-MBIT CMOS SRAM WITH DYNAMIC BIT-LINE LOADS [J].

MIYAJI, F ;

MATSUYAMA, Y ;

KANAISHI, Y ;

SENOH, K ;

EMORI, T ;

HAGIWARA, Y .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) :1213-1218

[8]

OHTANI T, 1987, FEB ISSCC, P264

[9] A 9-NS 1-MBIT CMOS SRAM [J].

SASAKI, K ;

ISHIBASHI, K ;

YAMANAKA, T ;

HASHIMOTO, N ;

NISHIDA, T ;

SHIMOHIGASHI, K ;

HANAMURA, S ;

HONJO, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) :1219-1225

[10] A 15-NS 1-MBIT CMOS SRAM [J].

SASAKI, K ;

HANAMURA, S ;

UEDA, K ;

OONO, T ;

MINATO, O ;

SAKAI, Y ;

MEGURO, S ;

TSUNEMATSU, M ;

MASUHARA, T ;

KUBOTERA, M ;

TOYOSHIMA, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1067-1072

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