PHOTOSENSITIVE TUNNELLING CONDUCTANCE IN AL-(AL OXIDE)-AL SANDWICH STRUCTURES

被引:8
作者
KADLEC, J
GUNDLACH, KH
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D O I
10.1016/0040-6090(72)90356-2
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T [工业技术];
学科分类号
08 ;
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页码:175 / &
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[1]   PHOTOEMISSIVE DETERMINATION OF BARRIER SHAPE IN TUNNEL JUNCTIONS [J].
BRAUNSTE.A ;
BRAUNSTE.M ;
PICUS, GS ;
MEAD, CA .
PHYSICAL REVIEW LETTERS, 1965, 14 (07) :219-&
[2]   VOLTAGE DEPENDENCE OF BARRIER HEIGHTS IN AL203 TUNNEL JUNCTIONS - (PHOTOEMISSION - ROOM TEMP TO 77DEGREES K - METAL-OXIDE-METAL JUNCTIONS - E/T) [J].
BRAUNSTEIN, AI ;
BRAUNSTEIN, M ;
PICUS, GS .
APPLIED PHYSICS LETTERS, 1966, 8 (04) :95-+
[3]  
Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9
[4]   PHOTOSENSITIVE TUNNELING AND SUPERCONDUCTIVITY [J].
GIAEVER, I .
PHYSICAL REVIEW LETTERS, 1968, 20 (23) :1286-&
[5]   TUNNELING INTO AND THROUGH EVAPORATED SEMICONDUCTING FILMS [J].
GIAEVER, I ;
ZELLER, HR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :502-&
[6]   PHOTOEMISSION OF HOLES AND ELECTRONS FROM ALUMINUM INTO ALUMINUM OXIDE [J].
GOODMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2176-&
[7]  
Gundlach K. H., 1970, Physica Status Solidi A, V2, P295, DOI 10.1002/pssa.19700020216
[8]   LOGARITHMIC CONDUCTIVITY OF AL-AL2O3-AL TUNNELING JUNCTIONS PRODUCED BY PLASMA-OXIDATION AND BY THERMAL OXIDATION [J].
GUNDLACH, KH ;
HOLZL, J .
SURFACE SCIENCE, 1971, 27 (01) :125-&
[9]   PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J].
HOLONYAK, N ;
KEUNE, DL ;
BURNHAM, RD ;
DUKE, CB .
PHYSICAL REVIEW LETTERS, 1970, 24 (11) :589-&
[10]  
KADLEC J, TO BE PUBLISHED