GENERAL SOLUTION OF QUANTIZATION IN A SEMICONDUCTOR SURFACE INVERSION LAYER IN ELECTRIC QUANTUM LIMIT

[1] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[2] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[3] PALS JA, TO BE PUBLISHED

[4] SCHRIEFFER JR, 1957, SEMICONDUCTOR SURFAC, P55

[5] Stern F., 1970, Journal of Computational Physics, V6, P56, DOI 10.1016/0021-9991(70)90004-5

[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[1] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[2] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[3] PALS JA, TO BE PUBLISHED

[4] SCHRIEFFER JR, 1957, SEMICONDUCTOR SURFAC, P55

[5] Stern F., 1970, Journal of Computational Physics, V6, P56, DOI 10.1016/0021-9991(70)90004-5

[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &