EFFECTS OF UNDERLAYER ROUGHNESS ON Nb/AlOx/Nb JUNCTION CHARACTERISTICS

被引：25

作者：

Kominami, S. ^{[1
]}

Yamada, H. ^{[1
]}

Miyamoto, N. ^{[1
]}

Takagi, K. ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of underlayer roughness on Nb/AlOx/Nb Josephson junction characteristics are clarified. MoNx and SiO films with 0.1-2.7 nm surface roughness are used as underlayers for the junctions. MoNx films with varying levels of roughness are prepared by sputter-etching. SiO films retain a smooth surface after sputter-etching. Existence of grain boundaries in the MoNx films causes surface roughness. Subgap leakage current of junctions on MoNx underlayers is higher than that of junctions on SiO underlayers, and it increases with the roughness of the underlayers. The roughness of the underlayer's surface is reflected in the Nb base electrode's surface. However, the roughness of the Nb surface is not directly reflected in the AlOx surface. The AlOx surface is smoother than the Nb surface. The cause of the leakage increase in the junctions on rough underlayers may be dispersion in the deposited Al thickness.

引用

页码：2182 / 2186

页数：5

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