ANALYTICAL MODEL FOR SINGLE EVENT BURNOUT OF POWER MOSFETS

被引:47
作者
HOHL, JH
GALLOWAY, KF
机构
关键词
D O I
10.1109/TNS.1987.4337465
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1275 / 1280
页数:6
相关论文
共 12 条
[1]  
ALEXANDER M, 1984, MOSPOWER APPLICATION
[2]  
BLACKBURN DL, 1985, JUN P IEEE PESC 85 T
[3]   DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].
CANALI, C ;
OTTAVIANI, G ;
ALBERIGI.A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+
[4]  
Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P258
[5]  
COLCLASER RA, MICROELECTRONICS PRO, P185
[6]  
HU C, 1982, IEEE T ELECTRON DEV, V29, P1287
[7]  
LEIGHTON RB, 1959, PRINCIPLES MODERN PH, P494
[8]  
MARTIN RC, 1987, 5TH ANN S SINGL EV E
[9]   PRECISION-MEASUREMENTS OF IONIZATION ENERGY AND ITS TEMPERATURE VARIATION IN HIGH-PURITY SILICON RADIATION DETECTORS [J].
RYAN, RD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (01) :473-480
[10]  
Sze S.M, 1981, PHYS SEMICONDUCTOR D, P45