PHONON CONDUCTIVITY OF GE IN TEMPERATURE RANGE 2-1000 DEGREES K

被引:34
作者
SHARMA, PC
DUBEY, KS
VERMA, GS
机构
来源
PHYSICAL REVIEW B | 1971年 / 3卷 / 06期
关键词
D O I
10.1103/PhysRevB.3.1985
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1985 / &
相关论文
共 6 条
[1]   NORMAL MODES OF GERMANIUM BY NEUTRON SPECTROMETRY [J].
BROCKHOUSE, BN ;
IYENGAR, PK .
PHYSICAL REVIEW, 1958, 111 (03) :747-754
[2]   MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J].
CALLAWAY, J .
PHYSICAL REVIEW, 1959, 113 (04) :1046-1051
[3]   VARIATIONAL CALCULATION OF THERMAL CONDUCTIVITY OF GERMANIUM [J].
HAMILTON, RA ;
PARROTT, JE .
PHYSICAL REVIEW, 1969, 178 (03) :1284-&
[4]   ANALYSIS OF LATTICE THERMAL CONDUCTIVITY [J].
HOLLAND, MG .
PHYSICAL REVIEW, 1963, 132 (06) :2461-&
[5]   ROLE OF 4-PHONON PROCESSES IN LATTICE THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1300 DEGREES K [J].
JOSHI, YP ;
TIWARI, MD ;
VERMA, GS .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :642-&
[6]   ANALYSIS OF PHONON CONDUCTIVITY - APPLICATION TO SI [J].
JOSHI, YP ;
VERMA, GS .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :750-&