MOLECULAR-BEAM EPITAXY OF IN-DOPED CDTE

被引：10

作者：

SUGIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：665 / 666

页数：2

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