ANOMALOUS HALL-EFFECT IN P-TYPE HG1-XCDXTE LIQUID-PHASE-EPITAXIAL LAYERS

被引:31
作者
ZEMEL, A
SHER, A
EGER, D
机构
关键词
D O I
10.1063/1.339570
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1861 / 1868
页数:8
相关论文
共 16 条
[11]  
PUTLEY EH, 1960, HALL EFFECT SEMICOND
[12]   ANOMALOUS ELECTRICAL PROPERTIES OF P-TYPE HG1-XCDXTE [J].
SCOTT, W ;
HAGER, RJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :803-&
[13]  
SMITH RA, 1961, SEMICONDUCTORS, P106
[14]  
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1
[15]   TRANSPORT-COEFFICIENTS OF INAS EPILAYERS [J].
WIEDER, HH .
APPLIED PHYSICS LETTERS, 1974, 25 (04) :206-208
[16]   ELECTRONIC TRANSPORT NEAR-SURFACE OF INDIUM-ANTIMONIDE FILMS [J].
ZEMEL, A ;
SITES, JR .
THIN SOLID FILMS, 1977, 41 (03) :297-305