INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE-PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 688 - &

[3] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[4] BOLTAKS BI, 1969, FIZ TVERD TELA+, V10, P2186

[5] BOLTAKS BI, 1962, SOV PHYS-SOL STATE, V4, P444

[6] BOLTAKS BI, 1969, FIZ TVERD TELA+, V11, P330

[7] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P102

[8] BOLTAKS BI, 1962, FIZ TVERD TELA, V4, P609

[9] COHEN BG, 1966, P IEEE SOLID STATE

[10] DAVOUSTSALTIEL E, 1965, 7 P INT C PHYS SEM, V3, P275

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE-PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 688 - &

[3] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[4] BOLTAKS BI, 1969, FIZ TVERD TELA+, V10, P2186

[5] BOLTAKS BI, 1962, SOV PHYS-SOL STATE, V4, P444

[6] BOLTAKS BI, 1969, FIZ TVERD TELA+, V11, P330

[7] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P102

[8] BOLTAKS BI, 1962, FIZ TVERD TELA, V4, P609

[9] COHEN BG, 1966, P IEEE SOLID STATE

[10] DAVOUSTSALTIEL E, 1965, 7 P INT C PHYS SEM, V3, P275