NEW COUPLING MECHANISM OF HIGH-FREQUENCY PHONONS AT INTERFACES

被引:4
作者
HALBRITTER, J
机构
关键词
D O I
10.1016/0375-9601(79)90437-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Experiments with solids coated by oxide, metal or He films - or simply by not specified dirt - show diffuse and inelastic scattering at such interfaces for phonons above 1010 Hz. A new interaction mechanism is proposed enhancing the diffuse scattering at coated surfaces. This mechanism is due to charges in the coating pinned to the interface, so that their relative motion under impinging phonons generates rf fields, which then act back on the charges. © 1979.
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页码:374 / 376
页数:3
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