DEEP LEVELS IN GAP

被引：19

作者：

OKUNO, Y ^{[1
]}

SUTO, K ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：832 / 836

页数：5

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共 17 条

[1] SOME PROPERTIES OF COPPER-DOPED GALLIUM PHOSPHIDE
ALLEN, JW
CHERRY, RJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 509 - &
[2] PHOTOCONDUCTIVE AND PHOTO-HALL MEASUREMENTS ON HIGH-RESISTIVITY GAP
BOWMAN, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 568 - &
[3] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM
BURTON, JA
HULL, GW
MORIN, FJ
SEVERIENS, JC
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 853 - 859
[4] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE
DEAN, PJ
HENRY, CH
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 812 - &
[5] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 13 - +
[6] Goldstein B., 1966, PHYS REV, V148, P715
[7] CHARGE-CARRIER CAPTURE AND ITS EFFECT ON TRANSITION CAPACITANCE IN GAP-CU DIODES
GRIMMEIS.HG
OLOFSSON, G
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2526 - +
[8] GRIMMEIS.HG, 1965, PHILIPS RES REP, V20, P107
[9] GRIMMEISS HG, 1966, PHILIPS RES REP, V21, P246
[10] GUTKIN AA, 1971, SOV PHYS SEMICOND+, V5, P1006