COMPARISON OF BJT AND MESFET FRONT ENDS IN BROAD-BAND OPTICAL TRANSIMPEDANCE PREAMPLIFIERS

被引：14

作者：

MOUSTAKAS, S

HULLETT, JL

STEPHENS, TD

机构：

[1] UNIV WESTERN AUSTRALIA,DEPT ELECT & ELECTR ENGN,NEDLANDS,WA 6009,AUSTRALIA

[2] TELECOM AUSTRALIA,RES LABS,CLAYTON N,VIC 3168,AUSTRALIA

来源：

关键词：

D O I：

10.1007/BF00620910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：57 / 60

页数：4

共 7 条

BAECHTOLD, W .

[2]

CHERRY EM, 1968, AMPLIFYING DEVICES L

[3]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] OPTIMUM TRANSIMPEDANCE BROAD-BAND OPTICAL PRE-AMPLIFIER DESIGN [J].

HULLETT, JL ;

MOUSTAKAS, S .

[5] NOISE MODELING FOR BROAD-BAND AMPLIFIER DESIGN [J].

MOUSTAKAS, S ;

HULLETT, JL .

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1981, 128 (02) :67-76

[6]

MUKUNDA DB, 1972, IEEE T ELECT DEV, V19, P338

[7]

Smith R. G., 1980, SEMICONDUCTOR DEVICE