C-MOS AND COMPLEMENTARY ISOLATED BIPOLAR-TRANSISTOR MONOLITHIC INTEGRATION PROCESS

被引：5

作者：

DARWISH, M ^{[1
]}

TAUBENES.R ^{[1
]}

机构：

[1] HORLOGER SA,CTR ELECTR,NEUCHATEL,SWITZERLAND

来源：

关键词：

D O I：

10.1149/1.2401989

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1119 / 1122

页数：4

共 9 条

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[J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &
[3] ABSENCE OF 1/F NOISE IN MOS TRANSISTORS OPERATED IN SATURATION
LEUENBERGER, F
[J]. ELECTRONICS LETTERS, 1971, 7 (18) : 561 - +
[4] LIN HC, 1969, IEEE T ELECTRON DEV, VED16, P945
[5] THEORY OF LATERAL TRANSISTORS
LINDMAYER, J
SCHNEIDER, W
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 225 - +
[6] LINK FJ, 1970, ELECTRONICS-US, V43, P72
[7] MAYER G, 1972, BELL SYST TECH J, V51, P363
[8] SIMPSON J, 1971, 201RNP EL SOC M CLEV
[9] VITTOZ E, 1972, IEEE J SOLID-ST CIRC, VSC 7, P100