FLUX DEPENDENCE OF DAMAGE ACCUMULATION IN SILICON DURING ION-BOMBARDMENT

被引：2

作者：

HOLLDACK, K

KERKOW, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 98卷 / 02期

关键词：

D O I：

10.1002/pssa.2210980225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：527 / 534

页数：8

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KERKOW, H ;

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