ANOMALOUS DIFFUSION OF BORON IN SILICON DUE TO HEAVY-ION BOMBARDMENT

被引：14

作者：

HOLLDACK, K

KERKOW, H

FRENTRUP, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssa.2210940145

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 363

页数：7

共 9 条

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[7] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION [J].

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[8]

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