PROTON-ENHANCED DIFFUSION AND VACANCY MIGRATION IN SILICON

被引：61

作者：

MASTERS, BJ

GOREY, EF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2717 / 2724

页数：8

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[1] P-TYPE SURFACE LAYERS IN ION-BOMBARDED SILICON
AMADEI, L
GERETH, R
QUEISSER, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1537 - &
[2] NEW MODEL FOR BORON-DIFFUSION IN SILICON
ANDERSON, JR
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 184 - 186
[3] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES
BARUCH, P
SAINTESPRIT, R
CONSTANTINESCU, C
PFISTER, JC
[J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 76 - &
[4] REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION
BARUCH, P
MONNIER, J
BLANCHARD, B
CASTAING, C
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 77 - 80
[5] STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE
BRABANT, JC
PUGNET, M
BARBOLLA, J
BROUSSEAU, M
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4809 - 4813
[6] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
CHENG, LJ
CORELLI, JC
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +
[7] CHU WK, 1977, ION IMPLANTATION SEM, P483
[8] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[9] DEINES JL, 1974, NBS40010 SPEC PUBL, P169
[10] RADIATION ENHANCED DIFFUSION IN SOLIDS
DIENES, GJ
DAMASK, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1713 - 1721

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